Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature
Publication
, Journal Article
Brown, AS; Bhattacharya, P; Singh, J; Zaman, P; Sen, S; Turco, F
Published in: Applied Physics Letters
December 1, 1996
We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400°C compared to that for alloys grown at 300 and 500°C. The barrier height and ideality factor of Ti- and Au-AlInAs Schottky diodes also exhibit large spatial variations and dependence on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. © 1996 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1996
Volume
68
Issue
2
Start / End Page
220 / 222
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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Brown, A. S., Bhattacharya, P., Singh, J., Zaman, P., Sen, S., & Turco, F. (1996). Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters, 68(2), 220–222. https://doi.org/10.1063/1.116466
Brown, A. S., P. Bhattacharya, J. Singh, P. Zaman, S. Sen, and F. Turco. “Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature.” Applied Physics Letters 68, no. 2 (December 1, 1996): 220–22. https://doi.org/10.1063/1.116466.
Brown AS, Bhattacharya P, Singh J, Zaman P, Sen S, Turco F. Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters. 1996 Dec 1;68(2):220–2.
Brown, A. S., et al. “Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature.” Applied Physics Letters, vol. 68, no. 2, Dec. 1996, pp. 220–22. Scopus, doi:10.1063/1.116466.
Brown AS, Bhattacharya P, Singh J, Zaman P, Sen S, Turco F. Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters. 1996 Dec 1;68(2):220–222.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1996
Volume
68
Issue
2
Start / End Page
220 / 222
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences