The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality
Publication
, Journal Article
Brown, AS; Mishra, UK; Henige, JA; Delaney, MJ
Published in: Journal of Applied Physics
January 1, 1988
The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4°off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4°is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1988
Volume
64
Issue
7
Start / End Page
3476 / 3480
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
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MLA
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Brown, A. S., Mishra, U. K., Henige, J. A., & Delaney, M. J. (1988). The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality. Journal of Applied Physics, 64(7), 3476–3480. https://doi.org/10.1063/1.341482
Brown, A. S., U. K. Mishra, J. A. Henige, and M. J. Delaney. “The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality.” Journal of Applied Physics 64, no. 7 (January 1, 1988): 3476–80. https://doi.org/10.1063/1.341482.
Brown AS, Mishra UK, Henige JA, Delaney MJ. The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality. Journal of Applied Physics. 1988 Jan 1;64(7):3476–80.
Brown, A. S., et al. “The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality.” Journal of Applied Physics, vol. 64, no. 7, Jan. 1988, pp. 3476–80. Scopus, doi:10.1063/1.341482.
Brown AS, Mishra UK, Henige JA, Delaney MJ. The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality. Journal of Applied Physics. 1988 Jan 1;64(7):3476–3480.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1988
Volume
64
Issue
7
Start / End Page
3476 / 3480
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences