Effect of growth conditions on the electrical and optical properties of AlxIn1-xAs (0.48

An increase of the Al- content of AlInAs layers above that of the composition which is lattice matched to InP (Al0.48In 0.52As) has been shown to lead to increased Schottky barrier height [Lin et al., Appl. Phys. Lett. 49, 1593 (1986)]. This technique has been used to realize improved gate-to-drain breakdown voltage in AlInAs-GaInAs modulation-doped transistors designed for power applications. This letter reports the observation of an optimum growth temperature regime for the Al-rich Schottky layers in the modulation-doped structure. Growth in this regime results in the highest conductivity for modulation-doped structures as well as the highest quality interface formation as determined from low temperature photoluminescence measurements.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering