AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers
Publication
, Journal Article
Larson, LE; Matloubian, MM; Brown, JJ; Brown, AS; Rhodes, R; Crampton, D; Thompson, M
Published in: Electronics Letters
January 1, 1993
High power-added efficiency microwave power amplifier results are reported for AllnAs/GalnAs on InP HEMTs operated at relatively low power supply voltages (2.5-3V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is attributed to the high gain and low access resistances of the devices, which leads to a high drain efficiency despite the low power supply voltage. © 1993, The Institution of Electrical Engineers. All rights reserved.
Duke Scholars
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
January 1, 1993
Volume
29
Issue
15
Start / End Page
1324 / 1326
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing
Citation
APA
Chicago
ICMJE
MLA
NLM
Larson, L. E., Matloubian, M. M., Brown, J. J., Brown, A. S., Rhodes, R., Crampton, D., & Thompson, M. (1993). AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers. Electronics Letters, 29(15), 1324–1326. https://doi.org/10.1049/el:19930888
Larson, L. E., M. M. Matloubian, J. J. Brown, A. S. Brown, R. Rhodes, D. Crampton, and M. Thompson. “AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers.” Electronics Letters 29, no. 15 (January 1, 1993): 1324–26. https://doi.org/10.1049/el:19930888.
Larson LE, Matloubian MM, Brown JJ, Brown AS, Rhodes R, Crampton D, et al. AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers. Electronics Letters. 1993 Jan 1;29(15):1324–6.
Larson, L. E., et al. “AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers.” Electronics Letters, vol. 29, no. 15, Jan. 1993, pp. 1324–26. Scopus, doi:10.1049/el:19930888.
Larson LE, Matloubian MM, Brown JJ, Brown AS, Rhodes R, Crampton D, Thompson M. AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers. Electronics Letters. 1993 Jan 1;29(15):1324–1326.
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
January 1, 1993
Volume
29
Issue
15
Start / End Page
1324 / 1326
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing