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Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology

Publication ,  Journal Article
Doolittle, WA; Namkoong, G; Carver, AG; Brown, AS
Published in: Solid-State Electronics
2003

While growth of wide bandgap semiconductor materials on crystalline oxides (sapphire, lithium gallate, lithium aluminate, zinc oxide and others) has become routine, growth of crystalline oxides on wide bandgap materials remains challenging and minimally explored. The potential payoff in terms of enhanced device performance, increased functionality and reliability warrants examining this option. This presentation aims at targeting key areas, where crystalline oxides could improve wide bandgap semiconductor device performance. Some of these include the use of ferroelectric oxides for power switching applications, oxides with anisotropic dielectric constants for high voltage termination and oxides with large electric flux density near breakdown. Unique polarization engineered structures are described that are enabled by using lithographically defined poled regions in a ferroelectric substrate. The desired crystalline oxide properties, potential implementation challenges and potential pitfalls will be discussed. © 2003 Published by Elsevier Ltd.

Duke Scholars

Published In

Solid-State Electronics

DOI

Publication Date

2003

Volume

47

Issue

12

Start / End Page

2143 / 2147

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

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Doolittle, W. A., Namkoong, G., Carver, A. G., & Brown, A. S. (2003). Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology. Solid-State Electronics, 47(12), 2143–2147. https://doi.org/10.1016/S0038-1101(03)00187-4
Doolittle, W Alan, Gon Namkoong, Alexander G. Carver, and April S. Brown. “Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology.” Solid-State Electronics 47, no. 12 (2003): 2143–47. https://doi.org/10.1016/S0038-1101(03)00187-4.
Doolittle WA, Namkoong G, Carver AG, Brown AS. Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology. Solid-State Electronics. 2003;47(12):2143–7.
Doolittle, W. Alan, et al. “Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology.” Solid-State Electronics, vol. 47, no. 12, 2003, pp. 2143–47. Manual, doi:10.1016/S0038-1101(03)00187-4.
Doolittle WA, Namkoong G, Carver AG, Brown AS. Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology. Solid-State Electronics. 2003;47(12):2143–2147.

Published In

Solid-State Electronics

DOI

Publication Date

2003

Volume

47

Issue

12

Start / End Page

2143 / 2147

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics