Ultrahigh speed static and dynamic frequency divider circuits
Publication
, Journal Article
Jensen, JF; Mishra, UK; Brown, AS; Salmon, LG; Delaney, MJ
Published in: Microwave journal
March 1, 1989
This paper describes the design, fabrication and testing of high speed GaAs MESFET and AlInAs/GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at frequencies up to 26.6 GHz. When the same static divide designs were implemented in AlInAs/GaInAs HEMT technology, the performance improved to frequencies up to 25.4 GHz. Electrooptic testing techniques were used to verify the performance of the GaAs MESFET dividers.
Duke Scholars
Published In
Microwave journal
ISSN
0026-2897
Publication Date
March 1, 1989
Volume
32
Issue
3
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies
Citation
APA
Chicago
ICMJE
MLA
NLM
Jensen, J. F., Mishra, U. K., Brown, A. S., Salmon, L. G., & Delaney, M. J. (1989). Ultrahigh speed static and dynamic frequency divider circuits. Microwave Journal, 32(3).
Jensen, J. F., U. K. Mishra, A. S. Brown, L. G. Salmon, and M. J. Delaney. “Ultrahigh speed static and dynamic frequency divider circuits.” Microwave Journal 32, no. 3 (March 1, 1989).
Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microwave journal. 1989 Mar 1;32(3).
Jensen, J. F., et al. “Ultrahigh speed static and dynamic frequency divider circuits.” Microwave Journal, vol. 32, no. 3, Mar. 1989.
Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microwave journal. 1989 Mar 1;32(3).
Published In
Microwave journal
ISSN
0026-2897
Publication Date
March 1, 1989
Volume
32
Issue
3
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies