Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects

Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈-2 1 1〉. The MQWs were grown using either dimer or tetramer arsenic (As2 or As4) over a substrate temperature range of 420-535 °C. The θ-2θ X-ray diffraction measurements, the atomic force microscopy (AFM) images of the surfaces, and the 8 K photoluminescence (PL) full-width at half-maximum (FWHM) values of the (1 1 1)B samples showed general improvement in the samples' material properties with increasing substrate temperature. While the X-ray diffraction measurements and the AFM images showed little difference between As2 and As4, the 8 K PL FWHM values varied greatly with respect to the arsenic species used. The exact (1 1 1)B samples had narrower 8 K PL FWHM values when grown with As2. For growth on misoriented (1 1 1)B InP, the 8 K FWHM values narrowed with As4. The misoriented (1 1 1)B samples had the narrowest 8 K PL FWHM when grown with As4 at a temperature of 520 °C; the exact (1 1 1)B at 495 °C when grown with As2.

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Author April S. Brown Electrical and Computer Engineering