Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP
GaInAs and AlInAs structures have been grown on on-axis and misoriented [4°-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrates is smooth. A smooth morphology is obtained on on-axis (110) InP, however, with a low substrate temperature and high V/III ratio. The photoluminescence properties of the individual alloys grown on (110) show high intensities, similar to that which can be obtained on (100) substrates, but the peaks are significantly broadened and shifted in energy. The interface quality of the GaInAs-AlInAs (110) heterojunction, inferred from the linewidths of quantum well emissions, is improved by growing at higher temperature
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- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences
Citation
Published In
DOI
Publication Date
Volume
Issue
Start / End Page
Location
Related Subject Headings
- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences