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Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP

Publication ,  Journal Article
Brown, AS; Metzger, RA; Henige, JA
Published in: J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
1993

GaInAs and AlInAs structures have been grown on on-axis and misoriented [4°-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrates is smooth. A smooth morphology is obtained on on-axis (110) InP, however, with a low substrate temperature and high V/III ratio. The photoluminescence properties of the individual alloys grown on (110) show high intensities, similar to that which can be obtained on (100) substrates, but the peaks are significantly broadened and shifted in energy. The interface quality of the GaInAs-AlInAs (110) heterojunction, inferred from the linewidths of quantum well emissions, is improved by growing at higher temperature

Duke Scholars

Published In

J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)

DOI

Publication Date

1993

Volume

11

Issue

3

Start / End Page

817 / 819

Location

Ottawa, Ont., Canada

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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MLA
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Brown, A. S., Metzger, R. A., & Henige, J. A. (1993). Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP. J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), 11(3), 817–819. https://doi.org/10.1116/1.586753
Brown, A. S., R. A. Metzger, and J. A. Henige. “Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 11, no. 3 (1993): 817–19. https://doi.org/10.1116/1.586753.
Brown AS, Metzger RA, Henige JA. Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(3):817–9.
Brown, A. S., et al. “Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11, no. 3, 1993, pp. 817–19. Manual, doi:10.1116/1.586753.
Brown AS, Metzger RA, Henige JA. Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110)InP. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(3):817–819.

Published In

J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)

DOI

Publication Date

1993

Volume

11

Issue

3

Start / End Page

817 / 819

Location

Ottawa, Ont., Canada

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences