Scholars@Duke publication: Ultrahigh speed static and dynamic frequency divider circuits

Ultrahigh speed static and dynamic frequency divider circuits

Publication , Journal Article

Jensen, JF; Mishra, UK; Brown, AS; Salmon, LG; Delaney, MJ

Published in: Microw. J. (USA)

1989

The authors describe the design, fabrication and testing of high speed GaAs MESFET and AlInAs-GaInAs HEMT frequency divider circuits. GaAs MESFET static frequency dividers operate at frequencies up to 18 GHz, and GaAs MESFET dynamic dividers operate at frequencies up to 26.6 GHz. When the same static divider designs were implemented in AlInAs-GaInAs HEMT technology, the performance improved to frequencies up to 25.4 GHz. Electro-optic testing techniques were used to verify the performance of the GaAs MESFET dividers

Duke Scholars

Author April S. Brown Electrical and Computer Engineering

Published In

Microw. J. (USA)

Publication Date

1989

Volume

Issue

Start / End Page

131 / 132

Citation

APA

Chicago

ICMJE

MLA

NLM

Jensen, J. F., Mishra, U. K., Brown, A. S., Salmon, L. G., & Delaney, M. J. (1989). Ultrahigh speed static and dynamic frequency divider circuits. Microw. J. (USA), 32(3), 131–132.

Jensen, J. F., U. K. Mishra, A. S. Brown, L. G. Salmon, and M. J. Delaney. “Ultrahigh speed static and dynamic frequency divider circuits.” Microw. J. (USA) 32, no. 3 (1989): 131–32.

Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microw J (USA). 1989;32(3):131–2.

Jensen, J. F., et al. “Ultrahigh speed static and dynamic frequency divider circuits.” Microw. J. (USA), vol. 32, no. 3, 1989, pp. 131–32.

Jensen JF, Mishra UK, Brown AS, Salmon LG, Delaney MJ. Ultrahigh speed static and dynamic frequency divider circuits. Microw J (USA). 1989;32(3):131–132.