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Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy

Publication ,  Journal Article
Triplett, GE; Brown, AS; May, GS
Published in: Applied Physics Letters
July 28, 2006
Published version (DOI)

A study of strained InAs-Al xGa 1-xAs ySb 1-y quantum well structures produced by molecular beam epitaxy is presented. The ability to manipulate quantum well strain by way of the Al xGa 1-xAs ySb 1-y buffer is examined using statistical experimental design. Results show that anion composition in the buffer (with a target lattice constant, a=6.12 Å) varies by as much as 3% in the 450-500°C growth temperature range. The data reveal interrelationships between strain, structural characteristics, and conductivity. Results demonstrate that these relationships exist and can be modeled empirically and exploited for the design of near-infrared optoelectronic devices. © 2006 American Institute of Physics.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.2226998

ISSN

0003-6951

Publication Date

July 28, 2006

Volume

89

Issue

3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Triplett, G. E., Brown, A. S., & May, G. S. (2006). Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy. Applied Physics Letters, 89(3). https://doi.org/10.1063/1.2226998
Triplett, G. E., A. S. Brown, and G. S. May. “Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy.” Applied Physics Letters 89, no. 3 (July 28, 2006). https://doi.org/10.1063/1.2226998.
Triplett GE, Brown AS, May GS. Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy. Applied Physics Letters. 2006 Jul 28;89(3).
Triplett, G. E., et al. “Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy.” Applied Physics Letters, vol. 89, no. 3, July 2006. Scopus, doi:10.1063/1.2226998.
Triplett GE, Brown AS, May GS. Strain monitoring in InAs-Al xGa 1-xAS ySb 1-y structures grown by molecular beam epitaxy. Applied Physics Letters. 2006 Jul 28;89(3).

Published In

Applied Physics Letters

DOI

10.1063/1.2226998

ISSN

0003-6951

Publication Date

July 28, 2006

Volume

89

Issue

3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences