Self-assembled quantum dot transformations via anion exchange
Journal articles
Shen, JJ; Brown, AS; Wang, Y; Wang, ZL
Published in: Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
July 1, 2001
Anion anneals have different effects on the quantum dot size distributions and vertical self-assembly. Phosphorus anneal at 300°C can enhance the uniformity of the dot size distribution for both 2 and 3 ML multilayer structures. TEM shows vertically aligned dots structure after annealing at 300°C and a relaxed structure after annealing at 350°C. Arsenic anneal increases the dot size, decreases the dots density, and decreases the uniformity of quantum dots distribution.
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Published In
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
July 1, 2001
Volume
19
Issue
4
Start / End Page
1463 / 1466
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
Citation
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Chicago
ICMJE
MLA
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Shen, J. J., Brown, A. S., Wang, Y., & Wang, Z. L. (2001). Self-assembled quantum dot transformations via anion exchange. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, 19(4), 1463–1466. https://doi.org/10.1116/1.1385916
Shen, J. J., A. S. Brown, Y. Wang, and Z. L. Wang. “Self-assembled quantum dot transformations via anion exchange.” Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures 19, no. 4 (July 1, 2001): 1463–66. https://doi.org/10.1116/1.1385916.
Shen JJ, Brown AS, Wang Y, Wang ZL. Self-assembled quantum dot transformations via anion exchange. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures. 2001 Jul 1;19(4):1463–6.
Shen, J. J., et al. “Self-assembled quantum dot transformations via anion exchange.” Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, vol. 19, no. 4, July 2001, pp. 1463–66. Scopus, doi:10.1116/1.1385916.
Shen JJ, Brown AS, Wang Y, Wang ZL. Self-assembled quantum dot transformations via anion exchange. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures. 2001 Jul 1;19(4):1463–1466.
Published In
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
July 1, 2001
Volume
19
Issue
4
Start / End Page
1463 / 1466
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering