
Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy
Defect free strained layer epitaxy opens possibilities for further improvement on the quantum well two-dimensional electron gas FET (TEGFET) structures grown using the GaInAs/AlInAs on InP materials system. Increased freedom with composition allows for optimizing certain properties of the structure, such as, the conduction edge discontinuity which controls the maximum sheet concentration (n
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- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
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Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry