Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy
Publication
, Journal Article
Lee, KK; Doolittle, WA; Brown, AS; May, GS; Stock, SR
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
May 1, 2000
The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.
Duke Scholars
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
May 1, 2000
Volume
18
Issue
3
Start / End Page
1448 / 1452
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Lee, K. K., Doolittle, W. A., Brown, A. S., May, G. S., & Stock, S. R. (2000). Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(3), 1448–1452. https://doi.org/10.1116/1.591401
Lee, K. K., W. A. Doolittle, A. S. Brown, G. S. May, and S. R. Stock. “Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, no. 3 (May 1, 2000): 1448–52. https://doi.org/10.1116/1.591401.
Lee KK, Doolittle WA, Brown AS, May GS, Stock SR. Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 May 1;18(3):1448–52.
Lee, K. K., et al. “Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 3, May 2000, pp. 1448–52. Scopus, doi:10.1116/1.591401.
Lee KK, Doolittle WA, Brown AS, May GS, Stock SR. Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 May 1;18(3):1448–1452.
Published In
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DOI
ISSN
1071-1023
Publication Date
May 1, 2000
Volume
18
Issue
3
Start / End Page
1448 / 1452
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences