Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange
Publication
, Journal Article
Wang, YQ; Wang, ZL; Shen, JJ; Brown, AS
Published in: Solid State Communications
June 1, 2002
P/As anion exchange is exploited to modify stacked InAs/GaAs quantum dot structures grown by molecular beam epitaxy (MBE). It is shown that the vertical alignment and size uniformity can be remarkably improved via P/As anion exchange. This, therefore, demonstrates a promising approach to tuning the quantum dot morphologies and structures, and hence, the electronic and optoelectronic properties. © 2002 Elsevier Science Ltd. All rights reserved.
Duke Scholars
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
June 1, 2002
Volume
122
Issue
10
Start / End Page
553 / 556
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Wang, Y. Q., Wang, Z. L., Shen, J. J., & Brown, A. S. (2002). Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications, 122(10), 553–556. https://doi.org/10.1016/S0038-1098(02)00212-0
Wang, Y. Q., Z. L. Wang, J. J. Shen, and A. S. Brown. “Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange.” Solid State Communications 122, no. 10 (June 1, 2002): 553–56. https://doi.org/10.1016/S0038-1098(02)00212-0.
Wang YQ, Wang ZL, Shen JJ, Brown AS. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications. 2002 Jun 1;122(10):553–6.
Wang, Y. Q., et al. “Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange.” Solid State Communications, vol. 122, no. 10, June 2002, pp. 553–56. Scopus, doi:10.1016/S0038-1098(02)00212-0.
Wang YQ, Wang ZL, Shen JJ, Brown AS. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications. 2002 Jun 1;122(10):553–556.
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
June 1, 2002
Volume
122
Issue
10
Start / End Page
553 / 556
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics