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Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

Publication ,  Journal Article
Wang, YQ; Wang, ZL; Shen, JJ; Brown, AS
Published in: Solid State Communications
June 1, 2002

P/As anion exchange is exploited to modify stacked InAs/GaAs quantum dot structures grown by molecular beam epitaxy (MBE). It is shown that the vertical alignment and size uniformity can be remarkably improved via P/As anion exchange. This, therefore, demonstrates a promising approach to tuning the quantum dot morphologies and structures, and hence, the electronic and optoelectronic properties. © 2002 Elsevier Science Ltd. All rights reserved.

Duke Scholars

Published In

Solid State Communications

DOI

ISSN

0038-1098

Publication Date

June 1, 2002

Volume

122

Issue

10

Start / End Page

553 / 556

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics
 

Citation

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Wang, Y. Q., Wang, Z. L., Shen, J. J., & Brown, A. S. (2002). Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications, 122(10), 553–556. https://doi.org/10.1016/S0038-1098(02)00212-0
Wang, Y. Q., Z. L. Wang, J. J. Shen, and A. S. Brown. “Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange.” Solid State Communications 122, no. 10 (June 1, 2002): 553–56. https://doi.org/10.1016/S0038-1098(02)00212-0.
Wang YQ, Wang ZL, Shen JJ, Brown AS. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications. 2002 Jun 1;122(10):553–6.
Wang, Y. Q., et al. “Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange.” Solid State Communications, vol. 122, no. 10, June 2002, pp. 553–56. Scopus, doi:10.1016/S0038-1098(02)00212-0.
Wang YQ, Wang ZL, Shen JJ, Brown AS. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange. Solid State Communications. 2002 Jun 1;122(10):553–556.
Journal cover image

Published In

Solid State Communications

DOI

ISSN

0038-1098

Publication Date

June 1, 2002

Volume

122

Issue

10

Start / End Page

553 / 556

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics