The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance
Publication
, Journal Article
Brown, AS; Mishra, UK; Henige, JA; Delaney, MJ
Published in: J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
1988
Ga0.47In0.53As-Al0.48In0.52As high-electron-mobility transistors (HEMT's) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance
Duke Scholars
Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1988
Volume
6
Issue
2
Start / End Page
678 / 681
Location
Los Angeles, CA, USA
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Mishra, U. K., Henige, J. A., & Delaney, M. J. (1988). The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance. J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), 6(2), 678–681. https://doi.org/10.1116/1.584389
Brown, A. S., U. K. Mishra, J. A. Henige, and M. J. Delaney. “The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 6, no. 2 (1988): 678–81. https://doi.org/10.1116/1.584389.
Brown AS, Mishra UK, Henige JA, Delaney MJ. The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1988;6(2):678–81.
Brown, A. S., et al. “The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 6, no. 2, 1988, pp. 678–81. Manual, doi:10.1116/1.584389.
Brown AS, Mishra UK, Henige JA, Delaney MJ. The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1988;6(2):678–681.
Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1988
Volume
6
Issue
2
Start / End Page
678 / 681
Location
Los Angeles, CA, USA