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The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Publication ,  Journal Article
Yi, C; Metzger, RA; Brown, AS
Published in: Journal of Electronic Materials
January 1, 2002
Published version (DOI)

Strained AlxIn1-xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of the strained-layer position and thickness. These results were used to implement strained emitter HBTs.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Journal of Electronic Materials

DOI

10.1007/s11664-002-0193-5

ISSN

0361-5235

Publication Date

January 1, 2002

Volume

31

Issue

8

Start / End Page

841 / 847

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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MLA
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Yi, C., Metzger, R. A., & Brown, A. S. (2002). The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors. Journal of Electronic Materials, 31(8), 841–847. https://doi.org/10.1007/s11664-002-0193-5
Yi, C., R. A. Metzger, and A. S. Brown. “The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors.” Journal of Electronic Materials 31, no. 8 (January 1, 2002): 841–47. https://doi.org/10.1007/s11664-002-0193-5.
Yi, C., et al. “The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors.” Journal of Electronic Materials, vol. 31, no. 8, Jan. 2002, pp. 841–47. Scopus, doi:10.1007/s11664-002-0193-5.
Journal cover image

Published In

Journal of Electronic Materials

DOI

10.1007/s11664-002-0193-5

ISSN

0361-5235

Publication Date

January 1, 2002

Volume

31

Issue

8

Start / End Page

841 / 847

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics