Scholars@Duke publication: Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits

Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits

Publication , Journal Article

Mishra, UK; Jensen, JF; Rensch, DB; Brown, AS; Stanchina, WE; Trew, RJ; Pierce, MW; Kargodorian, TV

Published in: Electron device letters

1989

AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An ft and an fmax of 49 and 62 GHz, respectively, have been achieved in a device with a 2 x 5-μm2 emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering

Published In

Electron device letters

Publication Date

1989

Volume

Issue

Start / End Page

467 / 469

Related Subject Headings

Applied Physics
4009 Electronics, sensors and digital hardware
0906 Electrical and Electronic Engineering

Citation

APA

Chicago

ICMJE

MLA

NLM

Mishra, U. K., Jensen, J. F., Rensch, D. B., Brown, A. S., Stanchina, W. E., Trew, R. J., … Kargodorian, T. V. (1989). Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits. Electron Device Letters, 10(10), 467–469.

Mishra, U. K., J. F. Jensen, D. B. Rensch, A. S. Brown, W. E. Stanchina, R. J. Trew, M. W. Pierce, and T. V. Kargodorian. “Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits.” Electron Device Letters 10, no. 10 (1989): 467–69.

Mishra UK, Jensen JF, Rensch DB, Brown AS, Stanchina WE, Trew RJ, et al. Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits. Electron device letters. 1989;10(10):467–9.

Mishra, U. K., et al. “Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits.” Electron Device Letters, vol. 10, no. 10, 1989, pp. 467–69.

Mishra UK, Jensen JF, Rensch DB, Brown AS, Stanchina WE, Trew RJ, Pierce MW, Kargodorian TV. Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits. Electron device letters. 1989;10(10):467–469.