Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration
Publication
, Journal Article
Brown, AS; Doolittle, WA; Kang, S; Shen, JJ; Wang, ZL; Dai, Z
Published in: Journal of Electronic Materials
January 1, 2000
Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate-lithium gallate-for the ultimate regrowth on a bonded GaN template. The bonding technology is important to reduce thermal stresses during the regrowth step. Herein, we focus on the understanding of the growth of GaN on lithium gallate.
Duke Scholars
Published In
Journal of Electronic Materials
DOI
ISSN
0361-5235
Publication Date
January 1, 2000
Volume
29
Issue
7
Start / End Page
894 / 896
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Doolittle, W. A., Kang, S., Shen, J. J., Wang, Z. L., & Dai, Z. (2000). Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration. Journal of Electronic Materials, 29(7), 894–896. https://doi.org/10.1007/s11664-000-0176-3
Brown, A. S., W. A. Doolittle, S. Kang, J. J. Shen, Z. L. Wang, and Z. Dai. “Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration.” Journal of Electronic Materials 29, no. 7 (January 1, 2000): 894–96. https://doi.org/10.1007/s11664-000-0176-3.
Brown AS, Doolittle WA, Kang S, Shen JJ, Wang ZL, Dai Z. Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration. Journal of Electronic Materials. 2000 Jan 1;29(7):894–6.
Brown, A. S., et al. “Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration.” Journal of Electronic Materials, vol. 29, no. 7, Jan. 2000, pp. 894–96. Scopus, doi:10.1007/s11664-000-0176-3.
Brown AS, Doolittle WA, Kang S, Shen JJ, Wang ZL, Dai Z. Growth of GaN on lithium gallate (LiGaO2 ) substrates for material integration. Journal of Electronic Materials. 2000 Jan 1;29(7):894–896.
Published In
Journal of Electronic Materials
DOI
ISSN
0361-5235
Publication Date
January 1, 2000
Volume
29
Issue
7
Start / End Page
894 / 896
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics