Scholars@Duke publication: Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout

Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout

Publication , Journal Article

Brown, JJ; Brown, AS; Rosenbaum, SE; Schmitz, AS; Matloubian, M; Larson, LE; Melendes, MA; Thompson, MA

Published in: IEEE Trans. Electron Devices (USA)

1993

Summary form only given. A systematic study of the improvement of Ga0.47In0.53As/Alx In1-xAs HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga0.47In0.53As/Alx In1-xAs on InP device with a sheet of charge placed at the center of the 300 Å wide channel. The device with a gate length of 0.5 μm, a source-drain spacing of 5μm, and an Al0.7In0.3As Schottky layer exhibited the best breakdown characteristics of |BVgd|=6.8 V and BVds=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500-μm-wide devices at 4 GHz and Vds=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively

Duke Scholars

Author April S. Brown Electrical and Computer Engineering

Published In

IEEE Trans. Electron Devices (USA)

DOI

10.1109/16.239781

Publication Date

1993

Volume

Issue

Start / End Page

2111 / 2112

Location

Santa Barbara, CA, USA

Related Subject Headings

Applied Physics
4009 Electronics, sensors and digital hardware
0906 Electrical and Electronic Engineering

Citation

APA

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ICMJE

MLA

NLM

Brown, J. J., Brown, A. S., Rosenbaum, S. E., Schmitz, A. S., Matloubian, M., Larson, L. E., … Thompson, M. A. (1993). Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout. IEEE Trans. Electron Devices (USA), 40(11), 2111–2112. https://doi.org/10.1109/16.239781

Brown, J. J., A. S. Brown, S. E. Rosenbaum, A. S. Schmitz, M. Matloubian, L. E. Larson, M. A. Melendes, and M. A. Thompson. “Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout.” IEEE Trans. Electron Devices (USA) 40, no. 11 (1993): 2111–12. https://doi.org/10.1109/16.239781.

Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, et al. Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout. IEEE Trans Electron Devices (USA). 1993;40(11):2111–2.

Brown, J. J., et al. “Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout.” IEEE Trans. Electron Devices (USA), vol. 40, no. 11, 1993, pp. 2111–12. Manual, doi:10.1109/16.239781.

Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, Melendes MA, Thompson MA. Study of the dependence of Ga0.47In0.53As/Alx In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout. IEEE Trans Electron Devices (USA). 1993;40(11):2111–2112.

Published In

IEEE Trans. Electron Devices (USA)

DOI

10.1109/16.239781

Publication Date

1993

Volume

Issue

Start / End Page

2111 / 2112

Location

Santa Barbara, CA, USA

Related Subject Headings

Applied Physics
4009 Electronics, sensors and digital hardware
0906 Electrical and Electronic Engineering