Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. II. SiI injection by oxygen precipitation

An oxygen precipitation/surface stacking-fault growth experiment was carried out to study the behavior of silicon self-interstitials injected by the precipitation of interstitial oxygen within the bulk of silicon samples. The sample front surfaces were capped with oxide or nitride layers, and the concentration of self-interstitials at the capped surfaces was determined by monitoring the growth or shrinkage of surface stacking faults. The experimental results were analyzed using steady-state and transient models, and estimates for the diffusivity DI, the equilibrium concentration CI^eq, and the surface-reaction constant kI^s(Si3N4), and kI^s(SiO2) of interstitials at nitride and oxide interfaces were obtained at 1125°C.

Duke Scholars

Author Hisham Z. Massoud Electrical and Computer Engineering