Scholars@Duke

Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements

Publication ,  Journal Article
Goodwin-Johansson, SH; Ray, M; Kim, Y; Massoud, HZ
Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
January 1, 1992
Published version (DOI) Publisher Link

Two-dimensional doping profiles can be determined from multiple one-dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as-implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one-dimensional SIMS measurements. Doping profiles of 0.4 μm boron junctions have been measured and reconstructed using the maximum likelihood estimation algorithm. Issues of sample alignment, SIMS depth resolution and SIMS sensitivity are discussed with respect to the application of this technique to sub 100 nm junctions.

Duke Scholars

Hisham Z. Massoud
Author Hisham Z. Massoud Electrical and Computer Engineering

Published In

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

DOI

10.1116/1.586360

EISSN

1520-8567

ISSN

1071-1023

Publication Date

January 1, 1992

Volume

10

Issue

1

Start / End Page

369 / 379

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

APA
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ICMJE
MLA
NLM
Goodwin-Johansson, S. H., Ray, M., Kim, Y., & Massoud, H. Z. (1992). Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 10(1), 369–379. https://doi.org/10.1116/1.586360
Goodwin-Johansson, Scott H., Mark Ray, Yudong Kim, and H. Z. Massoud. “Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 10, no. 1 (January 1, 1992): 369–79. https://doi.org/10.1116/1.586360.
Goodwin-Johansson SH, Ray M, Kim Y, Massoud HZ. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. 1992 Jan 1;10(1):369–79.
Goodwin-Johansson, Scott H., et al. “Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 10, no. 1, American Vacuum Society, Jan. 1992, pp. 369–79. Crossref, doi:10.1116/1.586360.
Goodwin-Johansson SH, Ray M, Kim Y, Massoud HZ. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. American Vacuum Society; 1992 Jan 1;10(1):369–379.

Published In

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

DOI

10.1116/1.586360

EISSN

1520-8567

ISSN

1071-1023

Publication Date

January 1, 1992

Volume

10

Issue

1

Start / End Page

369 / 379

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences