Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors

This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists of a switching ferroelectric layer and two nonswitching dielectric or buffer layers. This model predicts the dependence of the polarization charge density Pd, the electric field in the ferrolelectric film Efe, the voltage across the dielectric stack VOX, the semiconductor surface potential ψSC, and the semiconductor charge density QSC on the gate-to-bulk voltage VGB under static conditions. The low- and high-frequency capacitance-voltage characteristics of MFS capacitors are calculated.

Duke Scholars

Author Hisham Z. Massoud Electrical and Computer Engineering