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Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation

Journal articles  - Journal Article
Irene, EA
Published in: Journal of the Electrochemical Society
January 1, 1986
Published version (DOI)

The initial stage of the thermal oxidation of various crystallographic orientations of silicon ((100), (110), and (111) orientations) reveals a complex rate behavior. This behavior is not understood within the conventional linear-parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative (for all orientations studied) and somewhat quantitative (for (110) and (111) orientations) explanation of the complex substrate orientation effects. © 1986, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Hisham Z. Massoud
Author Hisham Z. Massoud Pierre R. Lamond Department of Electrical and Computer Engin ...
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Published In

Journal of the Electrochemical Society

DOI

10.1149/1.2108829

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1986

Volume

133

Issue

6

Start / End Page

1253 / 1256

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
 

Citation

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Irene, E. A. (1986). Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation. Journal of the Electrochemical Society, 133(6), 1253–1256. https://doi.org/10.1149/1.2108829
Irene, E. A. “Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation.” Journal of the Electrochemical Society 133, no. 6 (January 1, 1986): 1253–56. https://doi.org/10.1149/1.2108829.
Irene EA. Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation. Journal of the Electrochemical Society. 1986 Jan 1;133(6):1253–6.
Irene, E. A. “Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation.” Journal of the Electrochemical Society, vol. 133, no. 6, Jan. 1986, pp. 1253–56. Scopus, doi:10.1149/1.2108829.
Irene EA. Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation. Journal of the Electrochemical Society. 1986 Jan 1;133(6):1253–1256.

Published In

Journal of the Electrochemical Society

DOI

10.1149/1.2108829

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1986

Volume

133

Issue

6

Start / End Page

1253 / 1256

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry