Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon
Publication
, Journal Article
Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ
Published in: Electronics Letters
June 19, 1997
A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.
Duke Scholars
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
June 19, 1997
Volume
33
Issue
13
Start / End Page
1183 / 1184
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing
Citation
APA
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ICMJE
MLA
NLM
Mirabedini, M. R., Goodwin-Johansson, S. H., & Massoud, H. Z. (1997). Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon. Electronics Letters, 33(13), 1183–1184. https://doi.org/10.1049/el:19970776
Mirabedini, M. R., S. H. Goodwin-Johansson, and H. Z. Massoud. “Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon.” Electronics Letters 33, no. 13 (June 19, 1997): 1183–84. https://doi.org/10.1049/el:19970776.
Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon. Electronics Letters. 1997 Jun 19;33(13):1183–4.
Mirabedini, M. R., et al. “Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon.” Electronics Letters, vol. 33, no. 13, June 1997, pp. 1183–84. Scopus, doi:10.1049/el:19970776.
Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon. Electronics Letters. 1997 Jun 19;33(13):1183–1184.
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
June 19, 1997
Volume
33
Issue
13
Start / End Page
1183 / 1184
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing