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Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry

Publication ,  Journal Article
Sampson, RK; Massoud, HZ
Published in: Journal of the Electrochemical Society
January 1, 1993

The application of single-wavelength ellipsometry as an in situ technique for the simultaneous measurement of the silicon wafer substrate temperature and the surface oxide film thickness in a rapid-thermal processing system has been investigated. This technique is based on measuring the ellipsometry parameters ψ and Δ, and then calculating the wafer temperature and oxide thickness using polynomials derived from the known temperature dependence of the index of refraction of the silicon substrate and the silicon dioxide film. Temperature measured with ellipsometrey was compared to that measured with a thermocouple. The difference depends on the optical properties of the oxide and its thickness. For native-oxide-covered silicon wafers, the temperature measured by ellipsometry is within 20°C or less of that measured by a thermocouple for temperatures ranging from room temperature to 1000°C. For thicker oxides, similar results that agree with estimated error bounds were obtained. Temperature transients effects and technique optimization are discussed. © 1993, The Electrochemical Society, Inc. All rights reserved.

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Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1993

Volume

140

Issue

6

Start / End Page

1734 / 1743

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

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Sampson, R. K., & Massoud, H. Z. (1993). Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry. Journal of the Electrochemical Society, 140(6), 1734–1743. https://doi.org/10.1149/1.2221633
Sampson, R. K., and H. Z. Massoud. “Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry.” Journal of the Electrochemical Society 140, no. 6 (January 1, 1993): 1734–43. https://doi.org/10.1149/1.2221633.
Sampson RK, Massoud HZ. Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry. Journal of the Electrochemical Society. 1993 Jan 1;140(6):1734–43.
Sampson, R. K., and H. Z. Massoud. “Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry.” Journal of the Electrochemical Society, vol. 140, no. 6, Jan. 1993, pp. 1734–43. Scopus, doi:10.1149/1.2221633.
Sampson RK, Massoud HZ. Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry. Journal of the Electrochemical Society. 1993 Jan 1;140(6):1734–1743.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1993

Volume

140

Issue

6

Start / End Page

1734 / 1743

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry