Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction
Publication
, Journal Article
Carter-Coman, C; Bicknell-Tassius, R; Brown, AS; Jokerst, NM
Published in: Applied Physics Letters
March 31, 1997
Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs-GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrates. The In0.07Ga0.93As layers were grown to thicknesses below and above the conventional critical thickness. It was found that InGaAs films grown on the compliant substrates have a larger critical thickness and slower strain relief than InGaAs grown on conventional GaAs substrates. © 1997 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
March 31, 1997
Volume
70
Issue
13
Start / End Page
1754 / 1756
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
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Carter-Coman, C., Bicknell-Tassius, R., Brown, A. S., & Jokerst, N. M. (1997). Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction. Applied Physics Letters, 70(13), 1754–1756. https://doi.org/10.1063/1.118647
Carter-Coman, C., R. Bicknell-Tassius, A. S. Brown, and N. M. Jokerst. “Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction.” Applied Physics Letters 70, no. 13 (March 31, 1997): 1754–56. https://doi.org/10.1063/1.118647.
Carter-Coman C, Bicknell-Tassius R, Brown AS, Jokerst NM. Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction. Applied Physics Letters. 1997 Mar 31;70(13):1754–6.
Carter-Coman, C., et al. “Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction.” Applied Physics Letters, vol. 70, no. 13, Mar. 1997, pp. 1754–56. Scopus, doi:10.1063/1.118647.
Carter-Coman C, Bicknell-Tassius R, Brown AS, Jokerst NM. Analysis of In0.07 Ga0.93 As layers on GaAs compliant substrates by double crystal x-ray diffraction. Applied Physics Letters. 1997 Mar 31;70(13):1754–1756.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
March 31, 1997
Volume
70
Issue
13
Start / End Page
1754 / 1756
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences