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Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate

Publication ,  Journal Article
Doolittle, WA; Kropewnicki, T; Carter-Coman, C; Stock, S; Kohl, P; Jokerst, NM; Metzger, RA; Kang, S; Lee, KK; May, G; Brown, AS
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
January 1, 1998

Since we have found that an entire substrate can be chemically removed in less than 5 min and since GaN is impervious to chemical etching, the GaN on lithium gallate (LGO) system is an excellent template (due to near infinite etch selectivity) for developing a thin film/compliant GaN substrate. Here we report on our efforts to grow GaN on LGO, including improvement of the atomic surface morphology using pregrowth pretreatments. We also report the first transferred thin film GaN substrate grown on LGO, transferred off of LGO and mounted on GaAs. With this approach, (InAl)GaN alloys can be grown on thin GaN films, implementing a "compliant" substrate for the nitride alloy system. In addition, the flexibility of bonding to low cost Si, metal or standard ceramic IC packages is an attractive alternative to SiC and hydride vapor phase epitaxy GaN substrates for optimizing cost verses thermal conductivity concerns. We have demonstrated high quality growth of GaN on LGO. X-ray rocking curves of 145 arcsec are shown on a 0.28 μm thick films. For the first time, we present data on the out-of-plane crystalline quality of GaN/LGO material. Likewise, we show two orders of magnitude improvement in residual doping concentration and factors of 4 improvement in electron mobility. We show substantial vendor to vendor and intravendor LGO material quality variations. We have quantified the desorption of Ga and Li from the surface of LGO at typical growth temperatures using in situ desorption mass spectroscopy and x-ray photoelectron spectroscopy. © 1998 American Vacuum Society.

Duke Scholars

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

January 1, 1998

Volume

16

Issue

3

Start / End Page

1300 / 1304

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Chicago
ICMJE
MLA
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Doolittle, W. A., Kropewnicki, T., Carter-Coman, C., Stock, S., Kohl, P., Jokerst, N. M., … Brown, A. S. (1998). Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1300–1304. https://doi.org/10.1116/1.590005
Doolittle, W. A., T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N. M. Jokerst, R. A. Metzger, et al. “Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 3 (January 1, 1998): 1300–1304. https://doi.org/10.1116/1.590005.
Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, et al. Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1300–4.
Doolittle, W. A., et al. “Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 3, Jan. 1998, pp. 1300–04. Scopus, doi:10.1116/1.590005.
Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, Metzger RA, Kang S, Lee KK, May G, Brown AS. Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1300–1304.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

January 1, 1998

Volume

16

Issue

3

Start / End Page

1300 / 1304

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences