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Photonic effects in the deactivation of ion implanted arsenic

Publication ,  Journal Article
Fair, RB; Li, S
Published in: Journal of Applied Physics
April 15, 1998

Observation has been made of a photonic enhancement effect during optical rapid thermal annealing (RTA) of high dose, As implants in Si. Arsenic implant activation using optical radiation heating from tungsten-halogen lamps, λpeak=0.8 μm, was compared with annealing in a continuously heated rapid thermal vertical furnace, λpeak=2 μm. Energetic photons assist in the rapid deactivation of electrically active As+ to its equilibrium value in less than 5 s at the annealing temperature of 1000 °C. A model is presented for rapid As deactivation which is based upon the lowering of reaction energies through electron/hole recombination events. Transient-enhanced diffusion is observed in the RTA sample but not in the furnace-annealed sample. Rapid deactivation by recombination-enhanced processes causes the generation of excess self-interstitials of sufficient concentrations to contribute to the growth of end-of-range dislocation loops at the original amorphous/crystalline interface. After deactivation ends and the excess self-interstitials dissipate, the loops are able to dissolve and coarsen, thereby emitting self-interstitials which cause As transient-enhanced diffusion (TED) in the lower concentration portions of the RTA-annealed As profile. By contrast, end-of-range loops in samples similarly annealed in the vertical furnace are somewhat smaller but of higher density, and a 1000 °C, 15 s anneal results in As deactivation overshoot where [As+] drops below the electrical solubility limit. No As TED was observed in this sample due to the absorption of excess self-interstitials by the growing loops over the duration of the anneal. © 1998 American Institute of Physics.

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Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

April 15, 1998

Volume

83

Issue

8

Start / End Page

4081 / 4090

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

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Fair, R. B., & Li, S. (1998). Photonic effects in the deactivation of ion implanted arsenic. Journal of Applied Physics, 83(8), 4081–4090. https://doi.org/10.1063/1.367228
Fair, R. B., and S. Li. “Photonic effects in the deactivation of ion implanted arsenic.” Journal of Applied Physics 83, no. 8 (April 15, 1998): 4081–90. https://doi.org/10.1063/1.367228.
Fair RB, Li S. Photonic effects in the deactivation of ion implanted arsenic. Journal of Applied Physics. 1998 Apr 15;83(8):4081–90.
Fair, R. B., and S. Li. “Photonic effects in the deactivation of ion implanted arsenic.” Journal of Applied Physics, vol. 83, no. 8, Apr. 1998, pp. 4081–90. Scopus, doi:10.1063/1.367228.
Fair RB, Li S. Photonic effects in the deactivation of ion implanted arsenic. Journal of Applied Physics. 1998 Apr 15;83(8):4081–4090.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

April 15, 1998

Volume

83

Issue

8

Start / End Page

4081 / 4090

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences