SILICON PROCESS BALANCING ACT FOR VLSI.
Publication
, Journal Article
Fair, RB
Published in: Solid State Technology
January 1, 1982
The act of heating and cooling a silicon wafer in order to perform thermal diffusion and oxidation can introduce or produce point defects, dissolved impurities, microdefects and strain. In addition, the silicon surface bonding arrangements can be altered. To produce device quality surface layers it is necessary to balance the high temperature processes with respect to their impact on defect growth, oxygen precipitation, and impurity gettering. These phenomena are strongly influenced by how the dynamic balance of vacancies and silicon self-interstitials is maintained during high temperature processing.
Duke Scholars
Published In
Solid State Technology
ISSN
0038-111X
Publication Date
January 1, 1982
Volume
25
Issue
4
Start / End Page
220 / 226
Related Subject Headings
- Applied Physics
- 5108 Quantum physics
- 5104 Condensed matter physics
- 0206 Quantum Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1982). SILICON PROCESS BALANCING ACT FOR VLSI. Solid State Technology, 25(4), 220–226.
Fair, R. B. “SILICON PROCESS BALANCING ACT FOR VLSI.” Solid State Technology 25, no. 4 (January 1, 1982): 220–26.
Fair RB. SILICON PROCESS BALANCING ACT FOR VLSI. Solid State Technology. 1982 Jan 1;25(4):220–6.
Fair, R. B. “SILICON PROCESS BALANCING ACT FOR VLSI.” Solid State Technology, vol. 25, no. 4, Jan. 1982, pp. 220–26.
Fair RB. SILICON PROCESS BALANCING ACT FOR VLSI. Solid State Technology. 1982 Jan 1;25(4):220–226.
Published In
Solid State Technology
ISSN
0038-111X
Publication Date
January 1, 1982
Volume
25
Issue
4
Start / End Page
220 / 226
Related Subject Headings
- Applied Physics
- 5108 Quantum physics
- 5104 Condensed matter physics
- 0206 Quantum Physics
- 0204 Condensed Matter Physics