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Analysis of Phosphorus-Diffused Layers in Silicon

Publication ,  Journal Article
Fair, RB
Published in: Journal of the Electrochemical Society
January 1, 1978
Published version (DOI)

Using the Fair-Tsai model of P diffusion in Si, equations have been derived which relate the total P concentration, electron concentration, sheet resistance, and junction depth of a P-diffused layer. Curves are presented which show surface concentration as a function of the Rs. xjproduct, percentage of electrically active P as a function of surface concentration, and Rs vs. xj for P-implant doses ranging from 1 X 1014 to 5 x 1016 cm-2. © 1978, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Richard B. Fair
Author Richard B. Fair Electrical and Computer Engineering

Published In

Journal of the Electrochemical Society

DOI

10.1149/1.2131438

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1978

Volume

125

Issue

2

Start / End Page

323 / 327

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Fair, R. B. (1978). Analysis of Phosphorus-Diffused Layers in Silicon. Journal of the Electrochemical Society, 125(2), 323–327. https://doi.org/10.1149/1.2131438
Fair, R. B. “Analysis of Phosphorus-Diffused Layers in Silicon.” Journal of the Electrochemical Society 125, no. 2 (January 1, 1978): 323–27. https://doi.org/10.1149/1.2131438.
Fair RB. Analysis of Phosphorus-Diffused Layers in Silicon. Journal of the Electrochemical Society. 1978 Jan 1;125(2):323–7.
Fair, R. B. “Analysis of Phosphorus-Diffused Layers in Silicon.” Journal of the Electrochemical Society, vol. 125, no. 2, Jan. 1978, pp. 323–27. Scopus, doi:10.1149/1.2131438.
Fair RB. Analysis of Phosphorus-Diffused Layers in Silicon. Journal of the Electrochemical Society. 1978 Jan 1;125(2):323–327.

Published In

Journal of the Electrochemical Society

DOI

10.1149/1.2131438

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1978

Volume

125

Issue

2

Start / End Page

323 / 327

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry