Process model for simulating the effect of amorphizing implants on phosphorus diffusion

A model is proposed to account for the effect of end-of-range (EOR) dislocations, produced by amorphizing implants, on the diffusion of phosphorus. It is shown that the location of EOR dislocations relative to the P profile is critical. For high concentration P, the location of EOR damage relative to the kink in the P profile determines the extent of retarded diffusion. EOR damage can also screen portions of the P profile from self-interstitials produced by oxidation of the Si surface or dissolution of self-interstitial clusters in the Si bulk. This model has been put into PREDICT and simulations compared to data with good results.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering