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A self-consistent method for estimating non-step junction doping profiles from capacitance-voltage measurements

Publication ,  Journal Article
Fair, RB
Published in: J. Electrochem. Soc. (USA)
1971

The use of the step-junction approximation for calculating the net doping density from C-V measurement data can lead to serious errors in the resulting profiles for sequentially diffused structures. Non-step junction behavior can be accounted for if the equation for the effective doping density is multiplied by a correction factor. Two approximate methods of estimating this correction factor are discussed in which the net ionized impurity density on the high side of the junction is assumed to change either linearly or exponentially with incremental changes in depletion layer depth. For both of these approximations, the net ionized impurity density on the low side is assumed to change parabolically. These net distributions of charge, which are iteratively determined in a self-consistent fashion, yield the best approximations for this functional form of the profile, according to the C-V measurements made on the junction

Duke Scholars

Published In

J. Electrochem. Soc. (USA)

Publication Date

1971

Volume

118

Issue

6

Start / End Page

971 / 975

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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ICMJE
MLA
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Published In

J. Electrochem. Soc. (USA)

Publication Date

1971

Volume

118

Issue

6

Start / End Page

971 / 975

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry