Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing
Publication
, Journal Article
Fair, RB
Published in: IEEE Electron Device Letters
September 1, 1999
We have observed accelerated diffusion of B in ultrathin gate oxides during rapid thermal annealing (RTA) of the gate stack. Enhanced diffusion by 10-100 times over standard furnace annealing has been measured in SiO2. The activation energy for B diffusion in SiO2 during RTA is decreased by about 0.5 eV when compared to furnace annealing results. We propose a model that involves the capture of optically generated holes by diffusion defects which results in reduced B migration enthalpy through the modified defect, whose bonding has been weakened by the presence of captured positive charge. No similar optical radiation effect was observed when F was present in the oxide.
Duke Scholars
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
September 1, 1999
Volume
20
Issue
9
Start / End Page
466 / 469
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1999). Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing. IEEE Electron Device Letters, 20(9), 466–469. https://doi.org/10.1109/55.784454
Fair, R. B. “Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing.” IEEE Electron Device Letters 20, no. 9 (September 1, 1999): 466–69. https://doi.org/10.1109/55.784454.
Fair RB. Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing. IEEE Electron Device Letters. 1999 Sep 1;20(9):466–9.
Fair, R. B. “Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing.” IEEE Electron Device Letters, vol. 20, no. 9, Sept. 1999, pp. 466–69. Scopus, doi:10.1109/55.784454.
Fair RB. Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing. IEEE Electron Device Letters. 1999 Sep 1;20(9):466–469.
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
September 1, 1999
Volume
20
Issue
9
Start / End Page
466 / 469
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering