Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program
Publication
, Journal Article
Fair, RB
Published in: IEEE Transactions on Electron Devices
January 1, 1988
Low-thermal-budget processing models have Been developed that are applicable to a broad range of ion-implantation and annealing conditions. The cases discussed in this paper include low-temperature furnace annealing of B implants, preamorphization or postamorphization using Si+ or Ge+ implants, and rapid thermal annealing of low dose and high dose implants. Annihilation of implant damage is accounted for through activated annealing models. Damage type and location in depth are important in understanding enhanced or retarded diffusion of dopants. Finally, damage and diffusion models have been incorporated in the PREDICT program, and example calculations are compared with measurements. © 1988 IEEE
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1988
Volume
35
Issue
3
Start / End Page
285 / 293
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1988). Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program. IEEE Transactions on Electron Devices, 35(3), 285–293. https://doi.org/10.1109/16.2452
Fair, R. B. “Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program.” IEEE Transactions on Electron Devices 35, no. 3 (January 1, 1988): 285–93. https://doi.org/10.1109/16.2452.
Fair RB. Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program. IEEE Transactions on Electron Devices. 1988 Jan 1;35(3):285–93.
Fair, R. B. “Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program.” IEEE Transactions on Electron Devices, vol. 35, no. 3, Jan. 1988, pp. 285–93. Scopus, doi:10.1109/16.2452.
Fair RB. Low-Thermal-Budget Process Modeling with the PREDICT™ Computer Program. IEEE Transactions on Electron Devices. 1988 Jan 1;35(3):285–293.
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1988
Volume
35
Issue
3
Start / End Page
285 / 293
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering