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The gettering of boron by an ion-implanted antimony layer in silicon

Publication ,  Journal Article
Fair, RB; Pappas, PN
Published in: Solid State Electronics
January 1, 1975
Published version (DOI)

Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb. These results emphasize the first-order importance of cooperative effects between donors and acceptors in diffusion profile calculations. © 1975.

Duke Scholars

Richard B. Fair
Author Richard B. Fair Electrical and Computer Engineering

Published In

Solid State Electronics

DOI

10.1016/0038-1101(75)90179-3

ISSN

0038-1101

Publication Date

January 1, 1975

Volume

18

Issue

12

Start / End Page

1131 / 1134

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

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MLA
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Fair, R. B., & Pappas, P. N. (1975). The gettering of boron by an ion-implanted antimony layer in silicon. Solid State Electronics, 18(12), 1131–1134. https://doi.org/10.1016/0038-1101(75)90179-3
Fair, R. B., and P. N. Pappas. “The gettering of boron by an ion-implanted antimony layer in silicon.” Solid State Electronics 18, no. 12 (January 1, 1975): 1131–34. https://doi.org/10.1016/0038-1101(75)90179-3.
Fair RB, Pappas PN. The gettering of boron by an ion-implanted antimony layer in silicon. Solid State Electronics. 1975 Jan 1;18(12):1131–4.
Fair, R. B., and P. N. Pappas. “The gettering of boron by an ion-implanted antimony layer in silicon.” Solid State Electronics, vol. 18, no. 12, Jan. 1975, pp. 1131–34. Scopus, doi:10.1016/0038-1101(75)90179-3.
Fair RB, Pappas PN. The gettering of boron by an ion-implanted antimony layer in silicon. Solid State Electronics. 1975 Jan 1;18(12):1131–1134.
Journal cover image

Published In

Solid State Electronics

DOI

10.1016/0038-1101(75)90179-3

ISSN

0038-1101

Publication Date

January 1, 1975

Volume

18

Issue

12

Start / End Page

1131 / 1134

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics