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Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces

Publication ,  Journal Article
Wu, Y; Niimi, H; Yang, H; Lucovsky, G; Fair, RB
Published in: J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)
1999

The transport of B atoms out of p+ polycrystalline silicon (poly-Si) gate electrodes through SiO2 gate oxides to the Si-SiO2 interface during dopant activation anneals degrades performance and reliability of hole-conducting (p-channel) field effect transistors. This article studies the suppression of B atom transport by using remote plasma processing to form ultrathin Si3N4 and silicon oxynitride diffusion barrier layers between p+ poly-Si gate electrodes and SiO2 gate dielectrics. Suppression of B atom transport has been monitored through electrical measurements, demonstrating that ~0.8 nm of Si3N4, equivalent to a N areal density of ~4.5×1015 atoms cm-2, is sufficient to effectively suppress B out diffusion during aggressive anneals of ~1 min at 1000°C. The suppression and transport mechanisms in nitrides, oxides, and oxynitrides have been studied by varying the N atom areal density by alloying. Quantum chemistry calculations suggest that B transport occurs through the formation of donor-acceptor pair bonds between B+ ions and nonbonding electron pairs on oxygen atoms with the transport process requiring a connected O atom percolation pathway. Donor-acceptor pair bonds with B+ ions are also formed with N atoms in nitrides and oxynitride alloys, but with a binding energy more than 1.5 eV higher than B+ ion O-atom bonds so that nitrides and oxynitride alloys effectively block B diffusion through the formation of a deep trapping site

Duke Scholars

Published In

J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)

DOI

Publication Date

1999

Volume

17

Issue

4

Start / End Page

1813 / 1822

Location

San Diego, CA, USA

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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ICMJE
MLA
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Wu, Y., Niimi, H., Yang, H., Lucovsky, G., & Fair, R. B. (1999). Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces. J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), 17(4), 1813–1822. https://doi.org/10.1116/1.590832
Wu, Y., H. Niimi, H. Yang, G. Lucovsky, and R. B. Fair. “Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces.” J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA) 17, no. 4 (1999): 1813–22. https://doi.org/10.1116/1.590832.
Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB. Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces. J Vac Sci Technol B, Microelectron Nanometer Struct (USA). 1999;17(4):1813–22.
Wu, Y., et al. “Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces.” J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), vol. 17, no. 4, 1999, pp. 1813–22. Manual, doi:10.1116/1.590832.
Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB. Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces. J Vac Sci Technol B, Microelectron Nanometer Struct (USA). 1999;17(4):1813–1822.

Published In

J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA)

DOI

Publication Date

1999

Volume

17

Issue

4

Start / End Page

1813 / 1822

Location

San Diego, CA, USA

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences