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Modeling boron diffusion in thin-oxide p+ Si gate technology

Publication ,  Journal Article
Fair, RB; Gafiteanu, RA
Published in: IEEE Electron Device Letters
November 1, 1996
Published version (DOI)

A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO2 and, in particular, B in the presence of F and H2. We find that B diffuses via a peroxy linkage defect the concentration in the oxide of which changes under different processing conditions. From random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made.

Duke Scholars

Richard B. Fair
Author Richard B. Fair Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/55.541760

ISSN

0741-3106

Publication Date

November 1, 1996

Volume

17

Issue

11

Start / End Page

497 / 499

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Fair, R. B., & Gafiteanu, R. A. (1996). Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters, 17(11), 497–499. https://doi.org/10.1109/55.541760
Fair, R. B., and R. A. Gafiteanu. “Modeling boron diffusion in thin-oxide p+ Si gate technology.” IEEE Electron Device Letters 17, no. 11 (November 1, 1996): 497–99. https://doi.org/10.1109/55.541760.
Fair RB, Gafiteanu RA. Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters. 1996 Nov 1;17(11):497–9.
Fair, R. B., and R. A. Gafiteanu. “Modeling boron diffusion in thin-oxide p+ Si gate technology.” IEEE Electron Device Letters, vol. 17, no. 11, Nov. 1996, pp. 497–99. Scopus, doi:10.1109/55.541760.
Fair RB, Gafiteanu RA. Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters. 1996 Nov 1;17(11):497–499.

Published In

IEEE Electron Device Letters

DOI

10.1109/55.541760

ISSN

0741-3106

Publication Date

November 1, 1996

Volume

17

Issue

11

Start / End Page

497 / 499

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering