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Profile estimation of high-concentration arsenic diffusions in silicon

Publication ,  Journal Article
Fair, RB
Published in: Journal of Applied Physics
December 1, 1972

In order to facilitate surface concentration estimation for arsenic diffusion, a simple expression has been derived which is dependent only upon the junction depth xJ and the sheet resistance Rs: C s = 1.56 × 1017/xJRs. This equation was derived from experimental mobility data and a polynomial approximation to the solution of the arsenic diffusion equation. Available data on diffusions carried out from five different kinds of arsenic sources indicate that this derived equation for Cs is accurate to within 15% for Cs≳ni. © 1972 The American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1972

Volume

43

Issue

3

Start / End Page

1278 / 1280

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Fair, R. B. (1972). Profile estimation of high-concentration arsenic diffusions in silicon. Journal of Applied Physics, 43(3), 1278–1280. https://doi.org/10.1063/1.1661253
Fair, R. B. “Profile estimation of high-concentration arsenic diffusions in silicon.” Journal of Applied Physics 43, no. 3 (December 1, 1972): 1278–80. https://doi.org/10.1063/1.1661253.
Fair RB. Profile estimation of high-concentration arsenic diffusions in silicon. Journal of Applied Physics. 1972 Dec 1;43(3):1278–80.
Fair, R. B. “Profile estimation of high-concentration arsenic diffusions in silicon.” Journal of Applied Physics, vol. 43, no. 3, Dec. 1972, pp. 1278–80. Scopus, doi:10.1063/1.1661253.
Fair RB. Profile estimation of high-concentration arsenic diffusions in silicon. Journal of Applied Physics. 1972 Dec 1;43(3):1278–1280.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1972

Volume

43

Issue

3

Start / End Page

1278 / 1280

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences