DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's.
Publication
, Journal Article
Meyer, WG; Fair, RB
Published in: IEEE Transactions on Electron Devices
1983
The aging behavior of MOSFET's encapsulated with various types of capping layers was studied. Aging consisted of room-temperature pulsed gate bias operation with a drain-to-source voltage sufficient to cause avalanche multiplication in the channel. It was verified by secondary ion mass spectroscopy (SIMS) profiling that plasma silicon nitride capping layers introduce 2-4 times more hydrogen at the Si-gate oxide interface than exists in uncapped devices. Capping materials that serve as hydrogen barriers contribute to device aging by trapping hydrogen that is liberated during hot-carrier emission into the gate oxide.
Duke Scholars
Published In
IEEE Transactions on Electron Devices
Publication Date
1983
Volume
ED-30
Issue
2
Start / End Page
96 / 103
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
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Meyer, W. G., & Fair, R. B. (1983). DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's. IEEE Transactions on Electron Devices, ED-30(2), 96–103.
Meyer, W. G., and R. B. Fair. “DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's.” IEEE Transactions on Electron Devices ED-30, no. 2 (1983): 96–103.
Meyer WG, Fair RB. DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's. IEEE Transactions on Electron Devices. 1983;ED-30(2):96–103.
Meyer, W. G., and R. B. Fair. “DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's.” IEEE Transactions on Electron Devices, vol. ED-30, no. 2, 1983, pp. 96–103.
Meyer WG, Fair RB. DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFET's. IEEE Transactions on Electron Devices. 1983;ED-30(2):96–103.
Published In
IEEE Transactions on Electron Devices
Publication Date
1983
Volume
ED-30
Issue
2
Start / End Page
96 / 103
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering