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Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes

Publication ,  Journal Article
Li, N; Tan, TY; Gösele, U
Published in: Applied Physics A: Materials Science and Processing
March 1, 2008

The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths. © 2008 Springer-Verlag.

Duke Scholars

Published In

Applied Physics A: Materials Science and Processing

DOI

EISSN

1432-0630

ISSN

0947-8396

Publication Date

March 1, 2008

Volume

90

Issue

4

Start / End Page

591 / 596

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Li, N., Tan, T. Y., & Gösele, U. (2008). Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes. Applied Physics A: Materials Science and Processing, 90(4), 591–596. https://doi.org/10.1007/s00339-007-4376-z
Li, N., T. Y. Tan, and U. Gösele. “Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes.” Applied Physics A: Materials Science and Processing 90, no. 4 (March 1, 2008): 591–96. https://doi.org/10.1007/s00339-007-4376-z.
Li N, Tan TY, Gösele U. Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes. Applied Physics A: Materials Science and Processing. 2008 Mar 1;90(4):591–6.
Li, N., et al. “Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes.” Applied Physics A: Materials Science and Processing, vol. 90, no. 4, Mar. 2008, pp. 591–96. Scopus, doi:10.1007/s00339-007-4376-z.
Li N, Tan TY, Gösele U. Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes. Applied Physics A: Materials Science and Processing. 2008 Mar 1;90(4):591–596.
Journal cover image

Published In

Applied Physics A: Materials Science and Processing

DOI

EISSN

1432-0630

ISSN

0947-8396

Publication Date

March 1, 2008

Volume

90

Issue

4

Start / End Page

591 / 596

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics