Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN
Publication
, Journal Article
Bruno, G; Losurdo, M; Giangregorio, MM; Capezzuto, P; Brown, AS; Kim, TH; Choi, S
Published in: Applied Surface Science
October 2006
GaN is grown on Si-face 4H-SiC(001) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. (c) 2006 Elsevier B.V. All rights reserved.
Duke Scholars
Published In
Applied Surface Science
ISSN
0169-4332
Publication Date
October 2006
Volume
253
Issue
1
Start / End Page
219 / 223
Related Subject Headings
- Applied Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Bruno, G., Losurdo, M., Giangregorio, M. M., Capezzuto, P., Brown, A. S., Kim, T. H., & Choi, S. (2006). Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science, 253(1), 219–223.
Bruno, G., M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, T. H. Kim, and S. Choi. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science 253, no. 1 (October 2006): 219–23.
Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim TH, et al. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006 Oct;253(1):219–23.
Bruno, G., et al. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science, vol. 253, no. 1, Oct. 2006, pp. 219–23.
Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim TH, Choi S. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006 Oct;253(1):219–223.
Published In
Applied Surface Science
ISSN
0169-4332
Publication Date
October 2006
Volume
253
Issue
1
Start / End Page
219 / 223
Related Subject Headings
- Applied Physics