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Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction

Publication ,  Journal Article
McKay, KS; Lu, FP; Kim, J; Yi, C; Brown, AS; Hawkins, AR
Published in: Applied Physics Letters
2007
Published version (DOI)

p -type InGaAsSi heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAsSi interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment. © 2007 American Institute of Physics.

Duke Scholars

Jungsang Kim
Author Jungsang Kim Electrical and Computer Engineering
April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.2745254

ISSN

0003-6951

Publication Date

2007

Volume

90

Issue

22

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

APA
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ICMJE
MLA
NLM
McKay, K. S., Lu, F. P., Kim, J., Yi, C., Brown, A. S., & Hawkins, A. R. (2007). Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction. Applied Physics Letters, 90(22). https://doi.org/10.1063/1.2745254
McKay, K. S., F. P. Lu, J. Kim, C. Yi, A. S. Brown, and A. R. Hawkins. “Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction.” Applied Physics Letters 90, no. 22 (2007). https://doi.org/10.1063/1.2745254.
McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction. Applied Physics Letters. 2007;90(22).
McKay, K. S., et al. “Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction.” Applied Physics Letters, vol. 90, no. 22, 2007. Scival, doi:10.1063/1.2745254.
McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction. Applied Physics Letters. 2007;90(22).

Published In

Applied Physics Letters

DOI

10.1063/1.2745254

ISSN

0003-6951

Publication Date

2007

Volume

90

Issue

22

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences