Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy
Publication
, Journal Article
Kim, T-H; Choi, S; Brown, AS; Losurdo, M; Bruno, G
Published in: Applied Physics Letters
2006
GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H-and 6H-SiC(0001)Si substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. © 2006 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
Publication Date
2006
Volume
89
Issue
2
Start / End Page
021916
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Kim, T.-H., Choi, S., Brown, A. S., Losurdo, M., & Bruno, G. (2006). Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy. Applied Physics Letters, 89(2), 021916. https://doi.org/10.1063/1.2220007
Kim, Tong-Ho, Soojeong Choi, April S. Brown, Maria Losurdo, and Giovanni Bruno. “Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy.” Applied Physics Letters 89, no. 2 (2006): 021916. https://doi.org/10.1063/1.2220007.
Kim T-H, Choi S, Brown AS, Losurdo M, Bruno G. Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy. Applied Physics Letters. 2006;89(2):021916.
Kim, Tong-Ho, et al. “Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy.” Applied Physics Letters, vol. 89, no. 2, 2006, p. 021916. Manual, doi:10.1063/1.2220007.
Kim T-H, Choi S, Brown AS, Losurdo M, Bruno G. Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy. Applied Physics Letters. 2006;89(2):021916.
Published In
Applied Physics Letters
DOI
Publication Date
2006
Volume
89
Issue
2
Start / End Page
021916
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences