Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode
Publication
, Journal Article
Fang, ZL; Wu, P; Kundtz, N; Chang, AM; Liu, XY; Furdyna, JK
Published in: Applied Physics Letters
August 1, 2007
A vertical resonant tunneling diode based on the paramagnetic Zn1-x-y Mny Cdx Se system has been fabricated with a pillar diameter down to ∼6 μm. The diode exhibits high quality resonant tunneling characteristics through the electron subband of the quantum well at a temperature of 4.2 K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result. © 2007 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
August 1, 2007
Volume
91
Issue
2
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Fang, Z. L., Wu, P., Kundtz, N., Chang, A. M., Liu, X. Y., & Furdyna, J. K. (2007). Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode. Applied Physics Letters, 91(2). https://doi.org/10.1063/1.2751132
Fang, Z. L., P. Wu, N. Kundtz, A. M. Chang, X. Y. Liu, and J. K. Furdyna. “Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode.” Applied Physics Letters 91, no. 2 (August 1, 2007). https://doi.org/10.1063/1.2751132.
Fang ZL, Wu P, Kundtz N, Chang AM, Liu XY, Furdyna JK. Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode. Applied Physics Letters. 2007 Aug 1;91(2).
Fang, Z. L., et al. “Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode.” Applied Physics Letters, vol. 91, no. 2, Aug. 2007. Scopus, doi:10.1063/1.2751132.
Fang ZL, Wu P, Kundtz N, Chang AM, Liu XY, Furdyna JK. Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode. Applied Physics Letters. 2007 Aug 1;91(2).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
August 1, 2007
Volume
91
Issue
2
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences