Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal
Publication
, Journal Article
Chang, AM; Zhang, H; Pfeiffer, LN; West, KW
Published in: Applied Physics Letters
March 19, 2012
We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface. © 2012 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
March 19, 2012
Volume
100
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Chang, A. M., Zhang, H., Pfeiffer, L. N., & West, K. W. (2012). Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal. Applied Physics Letters, 100(12). https://doi.org/10.1063/1.3694052
Chang, A. M., H. Zhang, L. N. Pfeiffer, and K. W. West. “Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal.” Applied Physics Letters 100, no. 12 (March 19, 2012). https://doi.org/10.1063/1.3694052.
Chang AM, Zhang H, Pfeiffer LN, West KW. Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal. Applied Physics Letters. 2012 Mar 19;100(12).
Chang, A. M., et al. “Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal.” Applied Physics Letters, vol. 100, no. 12, Mar. 2012. Scopus, doi:10.1063/1.3694052.
Chang AM, Zhang H, Pfeiffer LN, West KW. Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal. Applied Physics Letters. 2012 Mar 19;100(12).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
March 19, 2012
Volume
100
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences