High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications
Publication
, Journal Article
Lam, W; Kurdoghlian, A; Igawa, A; Matloubian, M; Larson, L; Chou, C; Jelloian, L; Brown, A; Thompson, M; Ngo, C
Published in: IEEE Microwave and Guided Wave Letters
January 1, 1993
Advanced millimeter-wave systems require high-efficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Al0.48In0.53As/Ga0.47 In0.53 As) HEMT MMIC technology. The amplifier demonstrated state-of-the-art power performance, including 33% power-added efficiency and 24 dBm output power at 44 GHz. Potential applications include communication terminals and phased array antennas. © 1993 IEEE
Duke Scholars
Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
11
Start / End Page
420 / 422
Related Subject Headings
- Networking & Telecommunications
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Lam, W., Kurdoghlian, A., Igawa, A., Matloubian, M., Larson, L., Chou, C., … Ngo, C. (1993). High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications. IEEE Microwave and Guided Wave Letters, 3(11), 420–422. https://doi.org/10.1109/75.248519
Lam, W., A. Kurdoghlian, A. Igawa, M. Matloubian, L. Larson, C. Chou, L. Jelloian, A. Brown, M. Thompson, and C. Ngo. “High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications.” IEEE Microwave and Guided Wave Letters 3, no. 11 (January 1, 1993): 420–22. https://doi.org/10.1109/75.248519.
Lam W, Kurdoghlian A, Igawa A, Matloubian M, Larson L, Chou C, et al. High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(11):420–2.
Lam, W., et al. “High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications.” IEEE Microwave and Guided Wave Letters, vol. 3, no. 11, Jan. 1993, pp. 420–22. Scopus, doi:10.1109/75.248519.
Lam W, Kurdoghlian A, Igawa A, Matloubian M, Larson L, Chou C, Jelloian L, Brown A, Thompson M, Ngo C. High-Efficiency InP-Based HEMT MMIC Power Amplifier for Q-Band Applications. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(11):420–422.
Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
11
Start / End Page
420 / 422
Related Subject Headings
- Networking & Telecommunications
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics