High-efficiency InP-based HEMT MMIC power amplifier
Publication
, Journal Article
Kurdoghlian, A; Lam, W; Chou, C; Jellian, L; Igawa, A; Matloubian, M; Larson, L; Brown, A; Thompson, M; Ngo, C
Published in: Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
December 1, 1993
High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-art power performance including 33 percent power-added efficiency and 26 dBm of output power at 44 GHz. This is the highest output power reported with such a high efficiency for InP-based HEMT MMIC power amplifiers at Q-bands. The intended application is communication terminals.
Duke Scholars
Published In
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publication Date
December 1, 1993
Start / End Page
375 / 377
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Kurdoghlian, A., Lam, W., Chou, C., Jellian, L., Igawa, A., Matloubian, M., … Ngo, C. (1993). High-efficiency InP-based HEMT MMIC power amplifier. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), 375–377.
Kurdoghlian, A., W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, and C. Ngo. “High-efficiency InP-based HEMT MMIC power amplifier.” Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), December 1, 1993, 375–77.
Kurdoghlian A, Lam W, Chou C, Jellian L, Igawa A, Matloubian M, et al. High-efficiency InP-based HEMT MMIC power amplifier. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 1993 Dec 1;375–7.
Kurdoghlian, A., et al. “High-efficiency InP-based HEMT MMIC power amplifier.” Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), Dec. 1993, pp. 375–77.
Kurdoghlian A, Lam W, Chou C, Jellian L, Igawa A, Matloubian M, Larson L, Brown A, Thompson M, Ngo C. High-efficiency InP-based HEMT MMIC power amplifier. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 1993 Dec 1;375–377.
Published In
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publication Date
December 1, 1993
Start / End Page
375 / 377