Scholars@Duke publication: 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors

650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors

Publication , Journal Article

Nguyen, LD; Brown, AS; Thompson, MA; Jelloian, LM; Larson, LE; Matloubian, M

Published in: Electron device letters

1992

The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1-μm gate-length HEMTs for near-future microwave and millimeter-wave applications.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering

Published In

Electron device letters

Publication Date

1992

Volume

Issue

Start / End Page

143 / 145

Citation

APA

Chicago

ICMJE

MLA

NLM

Nguyen, L. D., Brown, A. S., Thompson, M. A., Jelloian, L. M., Larson, L. E., & Matloubian, M. (1992). 650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors. Electron Device Letters, 13(3), 143–145.

Nguyen, L. D., A. S. Brown, M. A. Thompson, L. M. Jelloian, L. E. Larson, and M. Matloubian. “650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors.” Electron Device Letters 13, no. 3 (1992): 143–45.

Nguyen LD, Brown AS, Thompson MA, Jelloian LM, Larson LE, Matloubian M. 650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors. Electron device letters. 1992;13(3):143–5.

Nguyen, L. D., et al. “650-angstrom self-aligned-gate pseudomorphic Al_0.48In_0.52As/Ga_0.20In_0.80As high electron mobility transistors.” Electron Device Letters, vol. 13, no. 3, 1992, pp. 143–45.