Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs
Publication
, Journal Article
Mishra, UK; Brown, AS; Jelloian, LM; Thompson, M; Nguyen, LD; Rosenbaum, SE
Published in: Technical Digest - International Electron Devices Meeting
December 1, 1989
A novel self-aligned technique for 0.15-μm-gate-length HEMTs (high electron mobility transistors) has been demonstrated. This technology uses a 0.15-μm-long T-gate structure defined by e-beam lithography with a SiO2 sidewall to implement the self-aligned scheme. The resultant device has low source and drain resistances, low gate resistance (200 Ω/mm), and a passivating layer over the active channel. Devices with an oxide sidewall yielded an fT of 177 GHz, whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1989
Start / End Page
101 / 104
Citation
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Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Nguyen, L. D., & Rosenbaum, S. E. (1989). Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs. Technical Digest - International Electron Devices Meeting, 101–104.
Mishra, U. K., A. S. Brown, L. M. Jelloian, M. Thompson, L. D. Nguyen, and S. E. Rosenbaum. “Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs.” Technical Digest - International Electron Devices Meeting, December 1, 1989, 101–4.
Mishra UK, Brown AS, Jelloian LM, Thompson M, Nguyen LD, Rosenbaum SE. Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs. Technical Digest - International Electron Devices Meeting. 1989 Dec 1;101–4.
Mishra, U. K., et al. “Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs.” Technical Digest - International Electron Devices Meeting, Dec. 1989, pp. 101–04.
Mishra UK, Brown AS, Jelloian LM, Thompson M, Nguyen LD, Rosenbaum SE. Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs. Technical Digest - International Electron Devices Meeting. 1989 Dec 1;101–104.
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1989
Start / End Page
101 / 104