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Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs

Publication ,  Journal Article
Nguyen, L; Brown, A; Delaney, M; Mishra, U; Larson, L; Jelloian, L; Melendes, M; Hooper, C; Thompson, M
Published in: Technical Digest International Electron Devices Meeting
December 1, 1989

The scaling of the vertical dimensions of 0.15-μm-gate-length Al0.48In0.52As-Ga0.47In0.53As high-electron-mobility transistors (HEMTs) to reduce their well-known excessive gate leakage current, premature breakdown voltage, and poor output conductance is discussed. It is found that, with a proper choice of doping densities and layer thicknesses, it is possible to realize very-high-performance AlInAs-GaInAs HEMTs (fT = 160 GHz, fmax = 300 GHz for 0.15-μm × 50-μm devices) with low gate leakage current, high breakdown voltage (7.0 V), and very low DC output conductance (45-mS/mm). The DC output conductance exhibits a very strong dependence on the AlInAs doping-thickness product and appears to be a limiting factor in the device power gain. By reducing the doping-thickness product, it was possible to reduce the output conductance by a factor of 3 and thus increase the power gain cutoff frequency by a factor of 1.7.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Technical Digest International Electron Devices Meeting

ISSN

0163-1918

Publication Date

December 1, 1989

Start / End Page

105 / 108
 

Citation

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Nguyen, L., Brown, A., Delaney, M., Mishra, U., Larson, L., Jelloian, L., … Thompson, M. (1989). Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs. Technical Digest International Electron Devices Meeting, 105–108.
Nguyen, L., A. Brown, M. Delaney, U. Mishra, L. Larson, L. Jelloian, M. Melendes, C. Hooper, and M. Thompson. “Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs.” Technical Digest International Electron Devices Meeting, December 1, 1989, 105–8.
Nguyen L, Brown A, Delaney M, Mishra U, Larson L, Jelloian L, et al. Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs. Technical Digest International Electron Devices Meeting. 1989 Dec 1;105–8.
Nguyen, L., et al. “Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs.” Technical Digest International Electron Devices Meeting, Dec. 1989, pp. 105–08.
Nguyen L, Brown A, Delaney M, Mishra U, Larson L, Jelloian L, Melendes M, Hooper C, Thompson M. Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs. Technical Digest International Electron Devices Meeting. 1989 Dec 1;105–108.

Published In

Technical Digest International Electron Devices Meeting

ISSN

0163-1918

Publication Date

December 1, 1989

Start / End Page

105 / 108